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gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 * restrictions on hazardous substances, european union directive 2011/65/eu. ordering information part number package NPT2020 bulk quantity NPT2020 - smbppr custom sample board 1 NPT2020 - smb2 1250 - 1850 mhz sample board features ? gan on si hemt depletion mode transistor ? suitable for linear and saturated applications ? tunable from dc - 3.5 ghz ? 48 v operation ? 13.5 db gain at 3.5 ghz ? 55 % drain efficiency at 3.5 ghz ? 100 % rf tested ? standard package with bolt down flange ? rohs* compliant and 260c reflow compatible description the NPT2020 gan hemt is a wideband transistor optimized for dc - 3.5 ghz operation. this device supports cw, pulsed, and linear operation with output power levels to 50 w (47 dbm) in an industry standard surface mount package. the NPT2020 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ism applications and vhf/ uhf/l/s - band radar. built using the sigantic? process - a proprietary gan - on - silicon technology. functional schematic pin configuration pin no. pin name function 1 rf in / v g rf input / gate 2 rf out / v d rf output / drain 3 flange 2 ground / source 2. the flange must be connected to rf and dc ground. this path must also provide a low thermal resistance heat path. 1. when ordering, specify application requirements (frequency, linearity, etc.) 1 3 2 r f i n / v g r f o u t / v d f l a n g e
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 rf electrical specifications: t a = 25 c, v ds = 48 v, i dq = 350 ma parameter test conditions symbol min. typ. max. units small signal gain cw, 3.5 ghz g ss - 14.5 - db saturated output power cw, 3.5 ghz p sat - 48 - dbm drain efficiency at saturation cw, 3.5 ghz ? sat - 60 - % power gain 3.5 ghz, p out = 50 w g p 12 13.5 - db drain efficiency 3.5 ghz, p out = 50 w ? 50 55 - % ruggedness: output mismatch all phase angles ? vswr = 10 :1, no device damage dc electrical characteristics: t a = 25 c parameter test conditions symbol min. typ. max. units drain - source leakage current v gs = - 8 v, v ds = 160 v i dlk - - 14 ma gate - source leakage current v gs = - 8 v, v ds = 0 v i glk - - 7 ma gate threshold voltage v ds = 48 v, i d = 14 ma v t - 2.5 - 1.5 - 0.5 v gate quiescent voltage v ds = 48 v, i d = 350 ma v gsq - 2.1 - 1.2 - 0.3 v on resistance v ds = 2 v, i d = 105 ma r on - 0.34 - ? saturated drain current v ds = 7 v pulsed, pulse width 300 s i d,max - 8.2 - a
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 3. exceeding any one or combination of these limits may cause permanent damage to this device. 4. macom does not recommend sustained operation near these survivability limits. 5. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. parameter absolute maximum drain source voltage, v ds 160 v gate source voltage, v gs - 10 to 3 v gate current, i g 28 ma junction temperature, t j + 200 c operating temperature - 4 0 c to +55 c storage temperature - 65 c to +150c 6. junction temperature (t j ) measured using ir microscopy. case temperature measured using thermocouple embedded in heat - sink. parameter test conditions symbol typical units thermal resistance v ds = 48 v, t j = 200c r ? jc 2.1 c/w thermal characteristics 6 handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these hbm class 1a devices. absolute maximum ratings 3,4,5
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 frequency (mhz) z s ( ) z l ( ) p sat (w) g ss (db) drain efficiency at p sat (%) 2700 1.6 - j7.2 2.9 + j2.3 65 16.2 58 3100 1.5 - j8.6 2.9 + j0.6 64 16.1 55 3500 1.9 - j10.7 2.9 - j0.7 62 15.7 53 load - pull performance: v ds = 48 v, i dq = 350 ma, t c = 25 c reference plane at device leads, cw drain efficiency and output power tradeoff impedance gain vs. output power drain efficiency vs. output power impedance reference z s and z l vs. frequency z s z l 11 12 13 14 15 16 17 18 19 30 35 40 45 50 2700 mhz 3100 mhz 3500 mhz gain (db) output power (dbm) 0 10 20 30 40 50 60 30 35 40 45 50 2700 mhz 3100 mhz 3500 mhz drain efficiency (%) output power (dbm)
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 parts measured on evaluation board (20 - mil thick ro4350). matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. recommended tuning solution component placement, transmission lines, and details are shown on the next page. evaluation board and recommended tuning solution 3.5 ghz narrowband circuit description turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (48 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs . bias sequencing c 1 4 0 . 7 p f c 1 5 1 0 p f c 9 1 0 p f c 1 1 f c 1 6 3 . 3 p f n p t 2 0 2 0 v g s r f i n v d s r f o u t c 2 0 . 1 f c 3 0 . 0 1 f c 4 1 0 0 0 p f c 1 7 0 . 6 p f c 1 3 6 . 8 p f c 1 1 4 . 7 p f c 1 2 6 . 8 p f r 1 2 4 . 9 c 1 0 1 2 p f r 2 0 c 5 1 f c 6 0 . 1 f c 7 0 . 0 1 f c 8 1 0 0 0 p f
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 reference value tolerance manufacturer part number c1, c5 1 f 10% avx 1210c105kat2a c2, c6 0.1 f 10% kemet c1206c104k1ractu c3, c7 0.01 f 10% avx 12061c103kat2a c4, c8 1000 pf 10% kemet c0805c102k1ractu c9 10 pf 5% atc atc800b100jt500x c10 12 pf 5% atc atc800b120jt500x c11 4.7 pf +/ - 0.1 pf atc atc800b4r7bt500x c12, c13 6.8 pf +/ - 0.1 pf atc atc800b6r8bt500x c14 0.7 pf +/ - 0.1 pf atc atc800b0r7bt500x c15 10 pf 5% atc atc800a100jt250x c16 3.3 pf +/ - 0.1 pf atc atc800b3r3bt500x c17 0.6 pf +/ - 0.1 pf atc atc800b0r6bt500x r1 24.9 ? 1% panasonic erj - 6gey24r9v r2 0 ? 1% panasonic erj - 6enf00r0v pcb rogers ro4350, r = 3.5, 20 mil evaluation board and recommended tuning solution 3.5 ghz narrowband circuit parts list
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 typical performance as measured in the 3.5 ghz evaluation board: cw, v ds = 48 v, i dq = 350 ma (unless noted) gain vs. output power over temperature drain efficiency vs. output power over temperature quiescent v gs vs. temperature 0 10 20 30 40 50 60 30 35 40 45 50 +25c -40c +55c drain efficiency (%) output power (dbm) 8 9 10 11 12 13 14 30 35 40 45 50 +25c -40c +55c gain (db) output power (dbm) -1.40 -1.35 -1.30 -1.25 -1.20 -1.15 -1.10 -1.05 -50 -25 0 25 50 75 100 175 ma 350 ma 525 ma v gsq (v) temperature (c)
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 2 - tone imd vs. output power 2 - tone imd3 vs. output power vs. quiescent current 2 - tone gain vs. output power vs. quiescent current typical 2 - tone performance as measured in the 3.5 ghz evaluation board: 1 mhz tone spacing, v ds = 48 v, i dq = 350 ma, t c = 25 c (unless noted) -50 -45 -40 -35 -30 -25 -20 1 10 100 175ma 262ma 350ma 437ma 525ma imd (dbc) p out (w-pep) -70 -60 -50 -40 -30 -20 -10 1 10 100 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep) 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 1 10 100 175ma 262ma 350ma 437ma 525ma gain (db) p out (w-pep)
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 parts measured on evaluation board (25 - mil thick 6010lm). matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. recommended tuning solution component placement, transmission lines, and details are shown on the next page. evaluation board and recommended tuning solution 1250 - 1850 mhz broadband circuit description turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (48 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs . bias sequencing c 1 3 0 . 2 p f c 1 2 . 7 p f c 2 2 7 p f l 1 2 7 n h r 1 1 1 0 c 3 4 7 p f c 4 1 0 f c 6 4 7 p f c 5 4 7 p f c 7 1 f c 8 4 . 7 f r 2 0 . 3 3 c 9 1 0 0 f c 1 0 3 . 9 p f c 1 2 0 . 5 p f c 1 1 3 9 p f n p t 2 0 2 0 v g s r f i n v d s r f o u t
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 10 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 reference value tolerance vendor part number c1 2.7 pf +/ - 0.1pf atc atc800b2r7bt500x c2 27 pf 5% atc atc800b270jt500x c3, c5, c6 47pf 5% atc atc800b470jt500x c4 10uf - 16v 5% digikey c2012x5r1c106m085ac c7 1.0uf - 100v 5% digikey c12101c105kat2a c8 4.7uf 5% digikey c5750x7r2a475k230ka c9 100uf - 63v 5% panasonic ece - v1ja101p c10 3.9pf +/ - 0.1pf atc atc800b3r9bt500x c11 39pf 5% atc atc800b390jt500x c12 0.5pf +/ - 0.1pf atc atc800b0r5bt500x c13 0.2pf +/ - 0.1pf atc atc800a0r2bt250x l1 27nh 5% coilcraft 0908sq - 27n r1 110 ohms 5% digikey cr1206 - jw - 1100elf r2 0.33 ohms 5% digikey erj - 6rqfr33v pcb rogers 6010lm, r = 10.2, 25 mil parts list evaluation board and recommended tuning solution 1250 - 1850 mhz broadband circuit
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 11 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 typical performance as measured in the 1250 - 1850 mhz evaluation board: cw, vds = 48 v, i dq = 350 ma, t a = 25 c (unless noted) gain & drain efficiency vs. frequency (max power) gain & drain efficiency vs. frequency (p out = 50 w) gain & drain efficiency vs. p out 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 1850 mhz 1550 mhz 1250 mhz drain efficiency (%) gain (db) p out (dbm) 30 40 50 60 70 80 0.0 5.0 10 15 20 25 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 pout drain efficiency gain drain efficiency (%), pout (w) gain (db) frequency (ghz) 30 40 50 60 70 80 0.0 5.0 10 15 20 25 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 pout drain efficiency gain drain efficiency (%), pout (w) gain (db) frequency (ghz)
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 12 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 ac360b - 2 metal - ceramic package ? ? meets jedec moisture sensitivity level 1 requirements. plating is ni / au.
gan wideband transistor 48 v, 50 w dc - 3.5 ghz NPT2020 13 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rev. v1 m/a - com technology solutions inc. all rights reserved. information in this document is provided in connection with m/a - com technology solutions inc ("macom") products. these materials are provided by macom as a service to its customers and may be used for informational purposes only. except as provided in macom's terms and conditions of sale for such products or in any separate agreement related to this document, macom assumes no liability whatsoever. macom assumes no responsibility for errors or omissions in these materials. macom may make changes to specifications and product descriptions at any time, without notice. macom makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document. these materials are provided "as is" without warranty of any kind, either express or implied, relating to sale and/or use of macom products including liability or warranties relating to fitness for a particular purpose, consequential or incidental damages, merchantability, or infringement of any patent, copyright or other intellectual property right. macom further does not warrant the accuracy or completeness of the information, text, graphics or other items contained within these materials. macom shall not be liable for any special, indirect, incidental, or consequential damages, including without limitation, lost revenues or lost profits, which may result from the use of these materials. macom products are not intended for use in medical, lifesaving or life sustaining applications. macom customers using or selling macom products for use in such applications do so at their own risk and agree to fully indemnify macom for any damages resulting from such improper use or sale.

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